Munich and Nuremberg, Germany – May 30, 2006 – At the PCIM 2006 exhibition and congress in Nuremberg, Infineon Technologies AG (FSE/NYSE: IFX) today introduced a new family of compact IGBT (Insulated Gate Bipolar Transistor) modules that enable power converter system solutions optimized for various industrial drives, as well as for windmills, elevators or auxiliary drives, power supplies and heating systems in trains and tractives. The new PrimePACK™ modules are based on an innovative packaging concept that also utilizes the advantages of Infineon’s new generation IGBT4 chips.
The innovative module design – in which, for example, the IGBT chips are closer to the baseplate’s screw-fastening points resulting in a low thermal resistance between baseplate and heatsink – offers such features as the ability to reduce internal stray inductance by approximately 60 percent from that of comparable modules. Reduced stray inductance is important to avoid over-voltage spikes. The special layout significantly improves heat distribution, resulting in a low thermal resistance of the whole system. With +150°C, the maximum operating temperature is considerably higher than the +125°C achieved with previous modules. Infineon was also able to lower the minimum storage temperature from -40°C to -55°C. The new IGBT modules for power converter applications can boost nominal current by approximately 20 percent without changing the blocking voltage or the module size, or can offer the same total power loss in a comparatively smaller module.
Offered in both 1200V and 1700V voltage classes, the PrimePACK modules are available in two module sizes; the 89 mm x 172 mm PrimePACK2 and the 89 mm x 250 mm PrimePACK3. The half-bridge configuration and modular design of the PrimePACK modules make it easy to scale the power of converters by employing different module sizes, or by connecting the modules of a given type in parallel. Both modules are up to 45 percent lighter than comparable modules with the same power, which makes it easier to construct and install power converters.
“With introduction of the PrimePACK modules, Infineon is again setting a new power module standard that is carefully aimed at meeting customer needs,” said Martin Hierholzer, Head of Industrial Power at Infineon Technologies. “The innovative module design, which has been optimized for system integration, and the new generation of high-performance IGBT4 chips with TrenchStop®/field stop technology combine to optimize the new family of modules to bring greater efficiency and ruggedness to industrial drive systems of all kinds.”
The market for industrial drives offers excellent growth potential. According to IMS Research, the worldwide market for industrial drives is expected to increase from 8.5 billion US dollars in 2005 to 9.4 billion US dollars in 2008, an annual average growth rate of 6 percent. Employing modern power semiconductors in those drive systems will make it possible to save a great deal of energy. For example, with electronic drive control, there is an average potential savings of 40 percent per motor.
PrimePACK expands Infineon’s comprehensive portfolio of power modules to include compact 1200 V and 1700 V products that are positioned between the power range for the 62 mm product family up to 200 kW and the power range for the proven IHM-A modules of more than 300 kW. The specified -55°C storage temperature range and maximum +150°C operating temperature of the PrimePACK modules also makes it possible to employ them in very harsh environments. The modules are produced in Warstein, Germany, and the IGBT diode and IGBT chips are manufactured in Villach, Austria.
Samples of the 1200 V and 1700 V PrimePACK modules are available now. Volume production is expected to begin in the first quarter of 2007. The modules are RoHS-compliant and meet fire protection requirements in accordance with NFF16-101 and 16-102.
Within the framework of its new generation of IGBT4 chips, Infineon is, for the first time, offering 1200 V components with a maximum operating temperature of 150°C and a junction temperature of 175°C. Besides improved thermal behavior, the IGBT4 chips offer lower forward power loss and excellent electrical ruggedness.