Infineon Technologies Introduces Innovative TrenchStop and FieldStop Technology in New Generation of Fast IGBTs; Enables Energy Efficiency
Technical details of the 1200V IGBT family
IGBT power switches cause both conduction losses and switching losses. With standard NPT IGBTs, only the conduction losses or only the switching losses can be minimized, in each case at the expense of the other parameter. Infineons unique 1200V IGBTs in TrenchStop technology enables reduced conduction losses up to 40 percent (at VCEsat typ.1.7 V; VGE = 15 V; IC = 15 A; Tj=25 °C), while switching losses remain as low as before. The FieldStop structure within the power semiconductor ensures a significant reduction in the tail current that occurs during high-speed switching, and at the same time, the TrenchStop cell limits conduction losses to a minimum due to the extremely low saturation voltage. As a result, considerably less heat is generated, and consequently, the cooling requirement is reduced, ultimately leading to a lower system cost.
The advantages of Infineons new TrenchStop technology family include the customary exceptional ruggedness and short-circuit withstand capability, increased reliability, and low electromagnetic interference (EMI). The 1200V IGBTs therefore enable the development of innovative concepts for a more compact system design for electrical drives. As with NPT IGBTs, the conductivity state voltage exhibits a positive temperature coefficient, permitting the parallel connection of multiple TrenchStop IGBTs.
Infineons new family of 1200V TrenchStop IGBTs in the advanced TO247 package currently comprises five single versions for output currents from 8A to 55A (Tc = 100°C) or 16A to 100A (Tc = 25°C), plus four versions in the DuoPack package for output currents from 8A to 40A (Tc = 100°C) or 16A to 80A (Tc = 25°C). The DuoPack, which includes the anti-parallel Emitter Controlled Diode with a TrenchStop IGBT device, enables exceptionally low-cost solutions in applications requiring a reverse diode. Infineon expects to introduce a further 600V version of the TrenchStop IGBTs before the end of 2003.
Availability and Pricing
All versions of the 1200V TrenchStop IGBTs are available in volume quantities. In quantities of one thousand units, the price per unit is less than 2.50 US dollars for 15A single versions in the TO247 package, and less than 3.00 US dollars for 15A DuoPack versions in the TO247 package.
As the technology leader, Infineon thus offers a comprehensive product portfolio of power semiconductors for power supply systems, ranging from standard IGBTs, through 600V and 1200V fast and high-speed IGBTs in NPT technology, to the new TrenchStop IGBTs. They are available in a number of package variants.
Infineon Technologies will present the new power semiconductors at PCIM 2002 show (14.-16. May 2002, Nuremberg, Germany) in Hall 12, booth 103.
Further information on Infineons IGBT products is available at www.infineon.com/igbt
Infineon Technologies AG, Munich, Germany, offers semiconductor and system solutions for applications in the wired and wireless communications markets, for security systems and smartcards, for the automotive and industrial sectors, as well as memory products. With a global presence, Infineon operates in the US from San Jose, CA, in the Asia-Pacific region from Singapore and in Japan from Tokyo. In the fiscal year 2001 (ending September), the company achieved sales of Euro 5.67 billion with about 33,800 employees worldwide. Infineon is listed on the DAX index of the Frankfurt Stock Exchange and on the New York Stock Exchange (ticker symbol: IFX). Further information is available at www.infineon.com.
Infineon Technologies Introduces Innovative TrenchStop and FieldStop Technology in New Generation of Fast IGBTs; Enables Energy EfficiencyPress Picture
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