Silicon Power Diode

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The Silicon Power Rapid Diode family complements Infineon’s existing high power 600V/650V diode portfolio by filling the gap between SiC diodes and previously released emitter-controlled diodes. They represent a perfect cost/performance balance and target high efficiency applications switching between 18kHz and 100kHz. Rapid 1 and Rapid 2 diodes are optimized to have excellent compatibility with CoolMOS™ and high speed IGBT (Insulated Gate Bipolar Transistor) such as the TRENCHSTOP™ 5 and HighSpeed 3.


Silicon Power Diode Unterkategorien


Rapid 1 Diode Family -  ultra-fast SI Diodes, perfectly balancing low cost and outstanding performance 

  • 1.35V temperature-stable forward voltage (V F)
  • Highest S-factor for ultimate softness and low EMI filtering needed
  • Lowest I  rrm to provide lowest turn-on losses on the boost switch
  • For applications switching between 18kHz and 40kHz

Learn more

 

Rapid 2 Diode Family -  hyper-fast SI Diodes, perfectly balancing low cost and outstanding performance 

  • Low reverse recovery charge (Q  rr)
  • Low reverse recovery time (t  rr)
  • Lowest I  rrm to provide lowest turn-on losses on the boost switch
  • Designed for applications switching between 40kHz and 100kHz

Learn more

Power Management Selection Guide 2016


Additional Product Information

Titel Größe Datum Version
879 KB 24 Okt 2014 01_00

Product Selection Guide

Titel Größe Datum Version
2 MB 24 Okt 2014 01_00

Product Brief

Titel Größe Datum Version
386 KB 14 Mär 2013 02_00

Article

Titel Größe Datum Version
568 KB 14 Mär 2013

Application Brochure

Titel Größe Datum Version
340 KB 23 Okt 2015 01_00

Application Notes

Titel Größe Datum Version
660 KB 24 Okt 2014 01_00

Simulation Models

Titel Größe Datum Version
3 KB 23 Jun 2015 01_00
3 KB 26 Jul 2007 01_00
4 KB 26 Jul 2007 01_00
3 KB 23 Jun 2015 01_00
Infineon's New 650V Rapid Diode Families

Infineon's New 650V Rapid Diode Families

Infineon’s new Rapid 1 and 2 power silicon diodes complement the existing high power 600V/650V diodes, filling the gap between the SiC diodes and emitter-controlled diodes. The new hyper- and ultra-fast diode families offer outstanding efficiency and reliability and perfectly balance cost and performance. The additional 50V provide higher reliability without efficiency being penalized.

 
Length 4:07
Infineon's New 650V Rapid 1 Diode

Infineon's New 650V Rapid 1 Diode

Infineon`s Rapid 1 diode family, with 1.35V temperature-stable forward voltage (V F), ensures the lowest conduction losses and by means of soft recovery keeps EMI emissions to a minimum. They are perfectly suited for Power Factor Correction (PFC) topologies, typically found in major home appliances, like air conditioners and washing machines, as well as boost stages in photovoltaic inverters.

 
Length 4:13
Infineon's New 650V Rapid 2 Diode

Infineon's New 650V Rapid 2 Diode

The Rapid 2 diode family is designed for applications switching between 40 kHz and 100 kHz by offering low reverse recovery charge (Q rr) and time (t rr) to minimize the reverse conduction times attributed to the power switch turn-on losses and thus providing maximum efficiency.

 
Length 4:09

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