BCM856S

Überblick

NPN Silicon AF Transistor Array

Zusammenfassung der Merkmale

  •  Precision matched transistor pair: ∆IC≤10%
  •  For current mirror applications
  •  Low collector-emitter saturation voltage
  •  Two (galvanic) internal isolated Transistors
  •  Complementary type: BCM846S
  •  BCM846S: For orientation in reel see package information below
  •  Pb-free (RoHS compliant) package
  •  Qualified according AEC Q101

Potentielle Zielanwendungen

  •  For current mirror applications
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