BC856S

Überblick

NPN Silicon AF Transistor Arrays

Zusammenfassung der Merkmale

  •  For AF input stages and driver applications
  •  High current gain
  •  Low collector-emitter saturation voltage
  •  Two (galvanic) internal isolated transistor with good matching in one package
  •  BC856S / U, BC857S: For orientation in reel see package information below
  •  Pb-free (RoHS compliant) package
  •  Qualified according AEC Q101

Potentielle Zielanwendungen

  •  For AF input stages and driver applications
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