BCR35PN

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NPN/PNP Silicon Digital Transistor Array

Zusammenfassung der Merkmale

• Switching circuit, inverter, interface circuit, driver circuit
• Two (galvanic) internal isolated NPN/PNP Transistors in one package
• Built in bias resistor NPN and PNP (R1=10 kΩ, R2=47 kΩ)
• Pb-free (ROHS compliant) package
• Qualified according AEC Q101

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