BFR360L3

Überblick

NPN Silicon RF Transistor

Zusammenfassung der Merkmale

Low voltage/ Low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
Pb-free (RoHS compliant) package1)
Qualification report according to AEC-Q101 available

Potentielle Zielanwendungen

Wireless Communications
For amplifier and oscillator applications in RF Front-end

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