BFP520

Überblick

NPN Silicon RF Transistor

Zusammenfassung der Merkmale

  • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage. Supports 2.9 V Vcc with enough external collector resistance.
  • High gain and low noise at high frequencies due to high transit frequency fT = 45 GHz
  • Finds usage e.g. in cordless phones and satellite receivers
  • Pb-free (RoHS compliant) standard package with visible leads

Potentielle Zielanwendungen

  • Wireless Communications
  • For amplifier and oscillator applications in RF Front-end
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