This Infineon RF PIN diode provides high-voltage handling capabilities, comes with low loss and offers low distortion levels.
Its low forward resistance, low capacitance and low inductance simplify design-in and support designers in creating versatile endsolutions.
Zusammenfassung der Merkmale
- Very low capacitance C = 0.25 pF (typical) at voltage VR = 0 V and frequencies f ≥ 1 GHz
- Low forward resistance RF = 2.6 Ω (typical) at forward current IF = 10 mA and frequency f = 2.5 GHz
- Low signal distortion
- Industry standard SOT323-3 package (2.1 mm x 2 mm x 0.9 mm)
- Pb-free, RoHS compliant and halogen-free
Optimized for low bias current RF and high-speed interface switches in:
- Wireless Communications
- High Speed Data Networks