BFP650
Überblick
High Linearity Low Noise SiGe:C NPN RF Transistor
Zusammenfassung der Merkmale
- Highly linear low noise driver amplifier for all RF frontends up to 4.5 GHz
- Output compression point OP1dB = 17 dBm at 70 mA, 3V, 2.4 GHz, 50Ω system
- Output 3rd order intermodulation point OIP3 = 30 dBm at 70 mA, 3 V, 2.4 GHz, 50 Ω system
- Maximum available gain Gma = 17.5 dB at 70 mA, 3V, 2.4 GHz
- Minimum noise figure NFmin = 1 dB at 30 mA, 3V, 2.4 GHz
- Based on Infineon´s reliable, high volume SiGe:C wafer technology
- Easy to use Pb-free (RoHS compliant) standard package with visible leads
Potentielle Zielanwendungen
- Driver amplifier
- ISM bands 434 and 868 MHz
- 1.9 GHz cordless phones
- CATV LNA
- Transmitter driver amplifier
- 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
- Output stage LNA for active antennas
- TV, GPS, SDARS
- 2.4 / 5 GHz WLAN
- 2.4 / 3.5 / 5 GHz WiMAX, etc.
- Suitable for 5 - 10.5 GHz oscillators
Support
