BAT15-03W

Überblick

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Zusammenfassung der Merkmale

• Low inductance Ls = 1.8 nH (typical)

• Low capacitance C = 0.28 pF (typical) at 1 MHz

• Industry standard SOD323 package (1.7 mm x 1.25 mm x 0.9 mm)

• Pb-free, RoHs compliant and halogen-free

Potentielle Zielanwendungen

For mixers and detectors in:

  • Sensor interface in and secury systems
  • Telematic systems
  • Compensators
  • Radar systems for industrial use
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