BTS5016-1EKB
Überblick
The power transistor is built by an N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 technology. It is specially designed to drive lamps up to H1 / H4 / H7 / H9, as well as LEDs in the harsh automotive environment.
Zusammenfassung der Merkmale
- One channel device
- Very low stand-by current
- 3.3 V and 5 V compatible logic inputs
- Electrostatic discharge protection (ESD)
- Optimized electromagnetic compatibility
- Logic ground independent from load ground
- Very low power DMOS leakage current in OFF state
- Green product (RoHS compliant)
- AEC qualified
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