FF6MR12KM1

Überblick

Half-bridge 1200 V CoolSiC™ MOSFET Module

62 mm 1200 V, 6 mΩ half-bridge module with CoolSiC™ MOSFET.

New generation of M1H product FF3MR12KM1H coming soon.

Zusammenfassung der Merkmale

  • High current density
  • Low switching losses
  • Superior gate oxide reliability
  • Highest robustness against humidity
  • Robust integrated body diode, and thus optimal thermal conditions
  • High cosmic ray robustness
  • High speed switching module with very low losses
  • Symmetrical module design and switching behavior of upper and lower switch
  • Standard construction technique of the module and therefore known reliable. Production in the 62mm high volume production line

Vorteile

  • Minimizes cooling efforts due to very low switching losses
  • High switching frequency allows using less magnetic components. Therefore reduction in volume and size/dimension
  • Reduction of system costs, due to module benefits
Diagramme
Support