FF23MR12W1M1_B11

Überblick

Half-bridge 1200 V CoolSiC™ MOSFET Module

EasyDUAL™ 1B 1200 V / 23 mΩ half-bridge module with CoolSiC™ MOSFET, integrated NTC temperature sensor and PressFIT Contact Technology

Zusammenfassung der Merkmale

  • High current density
  • Best in class switching and conduction losses
  • Low inductive design
  • RoHS-compliant modules

Vorteile

  • Highest efficiency for reduced cooling effort
  • Higher frequency operation
  • Increased power density
  • Optimized customer’s development cycle time and cost

The changing face of CAV – how electrification is changing the commercial vehicles business

 

This whitepaper reviews the e-CAV market‘s applications and takes a look at the solutions Infineon has on offer meeting the extreme demands placed on the electronic systems.

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Webinar about driving the electrification of commercial vehicles

 

Join our webinar and learn about trends and semiconductor system solutions in the electrification of commercial vehicles.

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Diagramme
Simulation
Trainings

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

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