F3L11MR12W2M1HP_B19

Überblick

EasyPACK™ 2B CoolSiC™ MOSFET 3-level module in NPC2 topology 1200 V, 11mΩ G1 with NTC, pre-applied thermal interface material (TIM) and PressFIT contact technology.

Zusammenfassung der Merkmale

• Best-in-class packages with 12 mm height
• Leading edge WBG material
• Very low module stray inductance
• Enhanced CoolSiC™ MOSFET Gen 1
• Enlarged gate drive voltage window
• Gate-source voltages of +23 V and -10 V
• T_vjop under overload condition up to 175°C
• PressFIT pins
• Integrated NTC temperature sensor
• Thermal Interface Material (TIM)

Vorteile

• Outstanding module efficiency
• System cost advantages
• System efficiency improvement
• Reduced cooling requirements
• Enabling higher frequency
• Increase of power density

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