DF4-19MR20W3M1HF_B11

Überblick

2000 V, 60 A Boost EasyPACK™ 3B CoolSiC™ MOSFET Module

EasyPACK™ 3B CoolSiC™ MOSFET 2000 V 60 A Boost module with PressFit PIN and NTC.

Zusammenfassung der Merkmale

  • Best in Class packages with 12 mm height
  • 2 kV CoolSiC™ MOSFET with enhanced generation 1 trench technology
  • Enlarged recommended gate drive voltage window from +15…+18 V & 0…-5 V
  • Extended maximum gate-source voltages of +23 V and -10 V
  • Tvjop under overload condition up to 175°C
  • PressFIT pins

Vorteile

  • Extended Easy family in 12 mm height with PressFIT
  • Pin technology enables platform-based design
  • High reliable package and production concept
  • Highest power density by lowest RDS
  • Reduction of drift caused by dynamic components
  • Supports full current operation at 1500 V DC by the sufficient over-voltage margin
  • A low FIT rate for cosmic ray induced fails
  • Best cost performance ratio with reduced system costs
Diagramme
Trainings

2 kV lead types Easy and 62 mm: features and benefits

Get familiar with the 2 kV CoolSiC™ MOSFET M1H - in this video, you will get an overview of the advantages of using it in both Easy and 62 mm packages.

Infineon’s Easy family’s tremendous growth in the past few years led Easy modules to become even more flexible and scalable in key areas, such as voltage class and topologies.

As a result, Easy modules are widely used, not only in industrial applications but also in automotive applications.

To continue the successful momentum created by Easy 3B, “the big brother of the family”, Infineon has successfully developed the Easy 4B package, extending the package’s capabilities even further!

The EasyPACK™ 4B is now the largest package in the Easy family, with three DCB substrates.

This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.

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