DF23MR12W1M1_B11

Überblick

Booster 1200 V CoolSiC™ MOSFET Module

EasyPACK™ 1B 1200 V, 23 mΩ booster module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology, with enhanced current rating of CoolSiC™ Schottky diodes in boost stage to allow for higher input current from PV panels.

New generation M1H product DF17MR12W1M1HF_B67 coming soon.

Zusammenfassung der Merkmale

  • High current density
  • Best in class switching and conduction losses
  • Low inductive design
  • Integrated NTC temperature sensor
  • PressFIT contact technology
  • RoHS-compliant modules

Vorteile

  • Highest efficiency for reduced cooling effort
  • Higher frequency operation
  • Increased power density
  • Optimized customer’s development cycle time and cost
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