Silicon Carbide MOSFET Modules
CoolSiC™ MOSFET module technology in different packages and topologies
Infineon’s range of CoolSiC™ MOSFET power modules open up new opportunities for inverter designers to realize never-before-seen levels of efficiency and power density. When Silicon Carbide (SiC) semiconductors are used as switches, the overall system efficiency is improved by allowing higher operating temperatures and switching frequencies while also supporting high. In addition, Silicon Carbide (SiC) power modules can be tailored to different application needs and are available in topologies from 52.9 mOhm to 1.44 mOhm RDS.
Our selection of CoolSiC™ Silicon Carbide MOSFET power modules are available in different configurations such as 3-level, half-bridge, fourpack, sixpack, or as booster, the 1200 V and 2000 V SiC MOSFET modules offer a superior gate-oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses.
Not only can all EasyPACK™, EasyDUAL™, and 62mm CoolSiC™ MOSFET power modules be ordered with pre-applied Thermal Interface Material (TIM), but additional features can be offered as well. For example, our Easy modules with a high-performance aluminum nitride (AlN) ceramic significantly improve the thermal performance of RthJH.
First portfolio of the generation of M1H Easy and 62mm modules are already available, orderable and registerable. Complete launch will be finished within calendar year 2023.
M1H Replacement Product Launching soon
expected in Q1/2024
expected in Q1/2024
In case of questions please get in contact with your sales representative or distribution.
Infineon offers a wide range of CoolSiC MOSFET automotive power modules for hybrid and electric vehicles applications: traction inverter (to convert the DC from the high voltage battery to AC for the electric motors), on-board battery charger, auxiliary inverters, HV/LV DC-DC converter and specific Fuel-Cell Electric Vehicles (FCEV) applications such as the fuel cell air compressor and DC-DC boost converter.
SiC MOSFET 650 V and 1200 V Gate Driver ICs
Ultra-fast switching power transistors such as CoolSiC™ MOSFETs can be easier handled by means of isolated gate output sections. Therefore, the galvanically isolated EiceDRIVER™ ICs based on Infineon’s coreless transformer technology are recommended as most suitable.
This video highlights the benefits of CoolSiC™, as seen through the eyes of our customers. Featuring testimonials from alpitronic, Tritium, Lite-On, Siemens Mobility, and Fronius, we see how SiC is driving innovation in energy generation, storage, and consumption.
CoolSiC™ MOSFET Microlearnings
This training will show you what makes CoolSiC™ the perfect choice for UPS applications.
This training covers the properties of Silicon Carbide which change the way how an inverter is designed compared to Si-chips. With that in mind, we explain SiC specific degradation mechanisms and how to ensure that SiC devices survive in the application, considering these special failure modes, by applying the reliability tests Infineon developed. These are internally mandatory for SiC device qualifications to ensure better quality, safety, and reliable device performance for years.
By the end of this training, you will be familiar with CoolSiC™ MOSFET 1200 V M1H technology for Easy modules and with Infineon ever-expanding Easy module portfolio in the area of wide band gap material and know about the key features and benefits that are coming along with our latest M1H 1200 V series.
With the growing market of electrical vehicles, the industry has put forward more requirements for the performance of charging piles.
This e-learning will show you that the emergence of CoolSiC™ MOSFETs has improved the charging pile industry to make the EV charger smaller, faster and with higher efficiency.
This training will introduce you to how the CoolSiC™ will help to design the next generation of servo drives.
Driving a CoolSiC™ MOSFET is much easier than you think. This training will show you how it can be driven with a 0 V turn-off gate voltage.
With this training you will learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET, how to identify suitable gate driving ICs based on peak current and power dissipation requirements and to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
In this video, you will focus on the comparison of the power handling capacity of IGBTs and SiC MOSFETs, Go through the different aspects that need to be considered when dimensioning an IGBT or a MOSFET for a certain application.
- Distinguish the features and benefits of Infineon’s CoolSiC™ solutions in target applications and identify Infineon’s fully scalable CoolSiC™ portfolio to meet this automotive market transition
- Explain the reasons for the increasing introduction of silicon carbide technology in the automotive applications