IMZA75R040M1H
Überblick
The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density.
Zusammenfassung der Merkmale
- Highly robust 750 V technology
- Best-in-class RDS(on) x Qfr
- Excellent Ron x Qoss and Ron x QG
- Low Crss/Ciss together and high VGSth
- 100% avalanche tested
- .XT interconnection technology for best-in-class thermal performance
Vorteile
- Superior efficiency in hard switching
- Enables higher switching frequency
- Higher reliability
- Withstand bus voltages beyond 500 V
- Robustness against parasitic turn
- Unipolar driving
Potentielle Zielanwendungen
Trainings
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