IMZA120R026M2H

Überblick

CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 on a TO247 4-pin IMZA package which ensures mounting assembly compatibility and easy replacement for existing system designs providing an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Zusammenfassung der Merkmale

  • RDS(on) = 26 mΩ at VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Wider max. VGS range from -10 V to +25 V
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage 4.2 V
  • Robust against parasitic turn on
  • .XT interconnection technology
  • Tighter VGS(th) parameter distribution

Vorteile

  • Better energy efficiency
  • Cooling optimization
  • Higher power density
  • New robustness features
  • Highly reliable
  • Easy paralleling
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