IMW65R033M2H CoolSiC™ MOSFET 650 V G2 in TO-247-3 package
Überblick
The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Zusammenfassung der Merkmale
- Excellent figures of merit (FOMs)
- Best in class RDS(on)
- High robustness and overall quality
- Flexible driving voltage range
- Support for unipolar driving (VGSoff=0)
- Best immunity against turn-on effects
- Improved package interconnect with .XT
Vorteile
- Enables BOM savings
- Maximizes the system performance per $
- Highest reliability
- Enables top efficiency and power density
- Ease-of-use
- Full compatibility with existing vendors
- Allows designs without fan or heatsink
Trainings
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