IMW65R020M2H

Überblick

CoolSiC™ MOSFET 650 V G2 in TO-247-3 package

The CoolSiC™ MOSFET 650 V, 20 mΩ G2 in a TO-247-3 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Zusammenfassung der Merkmale

  • Excellent figures of merit (FOMs)
  • Best in class RDS(on)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGSoff=0)
  • Best immunity against turn-on effects
  • Improved package interconnect with .XT

Vorteile

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability
  • Enables top efficiency and power density
  • Ease-of-use
  • Full compatibility with existing vendors
  • Allows designs without fan or heatsink

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