IMT65R026M2H CoolSiC™ MOSFET 650 V G2 in TOLL package, 26 mΩ
Überblick
The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
Zusammenfassung der Merkmale
- Excellent figures-of-merit (FOMs)
- Best in class RDS(on)
- Outstanding robustness
- Flexible driving voltage range
- Pin-to-pin compatible with all 8x8 FETs
- Improved package interconnect with .XT
- Tj,max=175°C
- 12k-cycle in TCoB
Vorteile
- Enables BOM savings
- Maximizes the system performance per $
- Highest reliability and longer lifetime
- Enables top efficiency and power density
- Small footprint to more power density
- Most compact daughter card design
- Fully leverages SiC in a small footprint
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