IMLT65R026M2H The CoolSiC™ MOSFET 650 V in TOLT combines the best performance of CoolSiC™ G2 with top-side cooling to achieve the highest system power density.
Überblick
The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already available with CoolSiC™ and CoolMOS™, it is now possible to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
Zusammenfassung der Merkmale
- Excellent figures of merit (FOMs)
- High robustness and overall quality
- Flexible driving voltage range
- Support for unipolar driving (VGS_off=0)
- Lower thermal resistance
- Improved package interconnect with .XT
- Top-side cooling package
Vorteile
- Enables BOM savings
- Maximizes the system performance per $
- Highest reliability
- Enables top efficiency and power density
- Simplifies assembly and cooling
- Liquid cooling "ready"
- Allows designs without fan or heatsink
- Lower stray inductances
- Better gate control
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