IMDQ65R020M2H CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 20 mΩ

Überblick

The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.

Zusammenfassung der Merkmale

  • Excellent figures-of-merit (FOMs)
  • High robustness and overall quality
  • Flexible driving voltage range
  • Support for unipolar driving (VGS,off=0)
  • Lower thermal resistance
  • Improved package interconnect with .XT
  • Top-side cooling

Vorteile

  • Enables BOM savings
  • Maximizes the system performance per $
  • Highest reliability
  • Enables top efficiency and power density
  • Simplifies assembly and cooling
  • Water cooling "ready"
  • Allows designs without fan or heatsink
  • Lower stray inductances
  • Better gate control
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