IMCQ120R078M2H CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package

Überblick

CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.

Zusammenfassung der Merkmale

  • VDSS = 1200 V @Tvj = 25°C
  • IDDC = 22 A @TC = 100°C
  • RDS(on) = 78.1 mΩ @VGS = 18 V, Tvj = 25°C
  • Very low switching losses
  • Overload operation up to Tvj = 200°C
  • Short circuit withstand time 2 µs
  • Benchmark gate threshold voltage
  • Robust against parasitic turn on
  • Robust body diode for hard commutation
  • .XT interconnection technology

Vorteile

  • Outstanding thermal performance
  • Increases energy efficiency
  • Higher power density
  • More compact and easier designs
  • Lower TCO cost or BOM cost
Diagramme
Trainings

Top-side cooling in a nutshell: CoolSiC™ – Q-DPAK

This training provides an overview of Infineon's Q-DPAK top-side cooling portfolio, including design considerations and thermal interface options.

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