IMBF170R650M1
Überblick
CoolSiC™ 1700 V SiC Trench MOSFET in TO-263-7 package
CoolSiC™ 1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.
Zusammenfassung der Merkmale
- Optimized for fly-back topologies
- Extremely low switching loss
- 12 V / 0 V gate-source voltage compatible with fly-back controllers
- Fully controllable dV/dt for EMI optimization
- SMD package with enhanced creepage and clearance distances, > 7 mm
Vorteile
- 1700 V SiC MOSFET enables simple single-ended fly-back topology at high efficiency level for use in auxiliary power supplies
- SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink
- Reduced isolation effort due to extended creepage and clearance distances of package
- Reduced system complexity
- High power density
Diagramme
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