AIMZA75R016M1H

Überblick

The CoolSiC™ MOSFET  750 V G1 leverages more than 20 years of SiC experience in Infineon.  It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. 

Zusammenfassung der Merkmale

  • Highly robust 750 V technology
  • Best-in-class RDS(on) x Qfr
  • Excellent Ron x Qoss and Ron x QG 
  • Low Crss/Ciss together and high VGSth
  • 100% avalanche tested 
  • .XT interconnection technology for best-in-class thermal performance

Vorteile

  • Superior efficiency in hard switching
  • Enables higher switching frequency
  • Higher reliability
  • Withstand bus voltages beyond 500 V
  • Robustness against parasitic turn
  • Unipolar driving
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