ISP670P06NMA

Überblick

P-channel power MOSFETs 60 V in SOT-223 package for automotive applications

ISP670P06NMA features a low RDS(on) of 0.167 Ohm for easy power loss management making it the best-in-class MOSFET in a SOT-223 package targeted for automotive application. The main advantage of a P-channel device is the reduction of design complexity and simple interface.

In addition, the avalanche ruggedness capability of this MOSFET makes it suitable for high demanding applications. 

Zusammenfassung der Merkmale

  • Automotive qualification
  • Lowest RDS(on) in portfolio
  • Supports a wide variety of applications
  • Robust, reliable performance

Vorteile

  • Quality and reliability
  • Low conduction lossses
  • Long production lifetime and support
  • Extention of battery lifetime
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