OptiMOS™ and StrongIRFET™ low voltage power MOSFET in a PQFN 3.3 x 3.3 package
The PQFN (Power Quad Flat No-Lead) 3.3 x 3.3 mm package offers high efficiency in a compact space-saving MOSFET package. Infineon is striving to improve product system design by combining cutting-edge silicon technology with ever improving packaging innovation. This family is ideal for power management in applications, such as synchronous rectification, telecom, server, portable charger and SMPS. This family of small-outline package MOSFETs are ideal for applications requiring enhanced efficiency and power density.
The portfolio is composed of single and dual, N and P-channel MOSFETs with voltages ranging from -30 V to 250 V. PQFN 3.3x3.3 Fused-Lead and Source-Down packages are available. Special features include monolithically integrated Schottky-like diodes, alongside optimization for Oring and e-fuse MOSFET applications.
The PQFN MOSFET offering is available with StrongIRFET™ and OptiMOS™ MOSFET technologies, offering customers optimized solutions for both general-purpose and high-performance applications. The family offers flexibility in gate drive with 4.5 V and 2.5 V gate drive capability.
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