ISC165N15NM6 OptiMOS™ 6 power MOSFET 150 V normal level in SuperSO8 package

Überblick

ISC165N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 150 V products.

OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.

Zusammenfassung der Merkmale

  • 20% lower FOMg than OptiMOS™ 5
  • Industry's lowest Qrr in 150 V
  • Improved diode softness vs OptiMOS™ 5
  • Tight Vgs(th) spread of +/-500 mV
  • High avalanche ruggedness
  • Max Tj of 175°C

Vorteile

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Optimized PCB area utilization
  • Enhanced robustness
  • Improved system reliability
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