ISC037N13NM6
Überblick
OptiMOS™ 6 power MOSFET 135 V Normal Level in SuperSO8 package
The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives, but also adaptable for other applications such as UPS.
Compared to the OptiMOS™ 5 150 V technology, significant performance improvements are achieved: Up to 70% reduction in diode reverse recovery charge (Qrr) and 45% lower peak reverse recovery current (Irrm) contribute to lower EMI and lower power losses.
The 38% reduction in gate threshold voltage spread results in improved dynamic current sharing, leading to increased reliability.
Zusammenfassung der Merkmale
Compared to OptiMOS™ 5 150 V
- Up to 48% lower ON-state-resistance
- Up to 38% lower gate threshold voltage spread
- Up to 70% reduction of reverse recovery charge (Qrr)
- Up to 45% lower peak reverse recovery current
(-Irrm)
Vorteile
- Size reduction enabled with SuperSO8 best-in-class
- System cost reduction
- Less paralleling required
- Reduced VDS overshoot & switching losses
- Higher power density designs
Potentielle Zielanwendungen
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