ISC009N06NM6SC

Überblick

OptiMOS™ 6 n-channel power MOSFET 60 V in SuperSO8 Dual-Side Cooling

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance.

Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~32% improved FOMQg x RDS(on) in SuperSO8 DSC.

The performance improvements lead to higher system efficiency and power density.

Zusammenfassung der Merkmale

  • High performance silicon technology
  • Low top-side RthJC (0/72 K/W)
  • Normal level gate drive
  • 175°C rated
  • Industrial qualification

Vorteile

  • Lower conduction losses than OptiMOS™ 5
  • Lower switching losses than OptiMOS™ 5
  • Improved heat dissipation
  • Superior power handling capability
  • Robust reliable performance
  • Drop-in replacement for SuperSO8
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