IRF6802SD

Überblick

A 25V Dual N-Channel HEXFET Power MOSFET in a DirectFET SA package rated at 16 amperes optimized with low on resistance.

Vorteile

  • RoHS Compliant
  • 100% Rg tested
  • Dual N-Channel MOSFET
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance

Potentielle Zielanwendungen

  • Battery Protection
Qualität

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