IRF6710S2
Überblick
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance.
Vorteile
- RoHS Compliant
- 100% Rg tested
- Low Profile (less than 0.7 mm)
- Dual Sided Cooling
- Optimized for Control FET Applications
- Optimized for High Frequency Switching
- Low Package Inductance
Potentielle Zielanwendungen
- MultiPhase ControlFET
Qualität
Support
