IRF2807S

Überblick

Vorteile

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100kHz
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Vorteile

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 10 V gate-drive voltage (called normal level)
  • Industry standard surface-mount power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered
Qualität
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