IQFH99N06NM5
Überblick
OptiMOS™ 5 60 V power MOSFETs in compact, high performance PQFN 8x6 package with very-low RDS(on)
This 60 V normal-level power MOSFET comes in our latest innovative, compact clip-based PQFN 8x6 mm2 package enabling very high currents and power levels. The part offers current ultra-low RDS(on) of 0.99 mΩ combined with outstanding thermal performance.
This enables higher system efficiency and power density for a large variety of end applications like battery-powered applications, battery management, low-voltage drives and SMPS.
Zusammenfassung der Merkmale
- Cutting edge OptiMOS™ silicon technology
- High chip/package ratio
- Ultra high currents in compact footprint
- Ultra-low package parasitics
- Optimized lead-frame and Cu-Clip design
- Footprint compatibility with PQFN 5x6
- Compact layout with less paralleling
Vorteile
- Minimized conduction losses
- High power capability
- Superior device performance
- Reduced voltage overshoot
- Superior thermal performance
- Re-use board for multiple power level
- Superior switching performance/EMI
Potentielle Zielanwendungen
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