IQE004NE1LM7CG
Überblick
OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down Center-Gate
IQE004NE1LM7CG is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. The Center-Gate footprint is optimized for parallelization. Together with the Source-Down package, thermal management is made easy, pushing power density and efficiency to the next level in High Power SMPS applications.
Zusammenfassung der Merkmale
- New 15 V trench power MOSFET technology
- RDS(on) of 0.45 mOhm
- Outstanding FOMQOSS/FOMQg
- Ultra-low package parasitics
- Center-Gate footprint
Vorteile
- Top fit in high-ratio DC-DC conversion
- Reduced conduction losses
- High efficiency
- Best switching performance
- Center-Gate for ideal parallelization
Potentielle Zielanwendungen
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