IQE004NE1LM7

Überblick

OptiMOS™ 7 power MOSFET 15 V in PQFN 3.3x3.3 Source-Down

IQE004NE1LM7 is part of the first 15 V trench power MOSFETs portfolio in the industry. Reduced breakdown voltage leads to an improvement in RDS(on) and FOMQg by ~30%, and ~40% for FOMQOSS when compared to OptiMOS™ 5 25 V. Together with the Source-Down package, thermal management is made easy, pushing power density and efficiency to the next level in High Power SMPS applications.

Zusammenfassung der Merkmale

  • New 15 V trench power MOSFET technology
  • RDS(on) of 0.45 mOhm
  • Outstanding FOMQOSS/FOMQg
  • Ultra-low package parasitics
  • Standard-Gate

Vorteile

  • Top fit in high-ratio DC-DC conversion
  • Reduced conduction losses
  • High efficiency
  • Best switching performance
  • Standard-Gate for easy layout fit-in

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