IQD020N10NM5SC

Überblick

OptiMOS™ power MOSFETs 100 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on).

The power MOSFET IQD020N10NM5SC comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package.

This enables higher system efficiency and power density for a large variety of end applications.

Zusammenfassung der Merkmale

  • Cutting edge 100 V silicon technology
  • Outstanding FOMs
  • Improved thermal performance
  • Ultra-low parasitics
  • Maximized chip/package ratio

Vorteile

  • Minimized conduction losses
  • Reduced voltage overshoot
  • Increased maximum current capability
  • Fast switching
  • Less device paralleling required
  • Lowest RDS(on) on a 5x6 footprint
  • Improved thermal performance
  • Easy thermal management
  • Best switching performance
  • Industry-standard package
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