IPTG025N15NM6
Überblick
OptiMOS™ 6 power MOSFET 150 V normal level in TOLG package for higher thermal cycling on board performance
IPTG025N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
Combined with TOLG package, it shows excellent solder joint reliability with ~30% smaller footprint than D²PAK 7-pin.
Zusammenfassung der Merkmale
- 36% lower RDS(on) than OptiMOS™ 5
- Industry's lowest Qrr in 150 V
- Improved diode softness vs OptiMOS™ 5
- Tight Vgs(th) spread of +/-500 mV
- High avalanche ruggedness
- Gullwing leads
- High current rating
- Max Tj of 175°C and MSL1
Vorteile
- Low conduction and switching losses
- Stable operation with improved EMI
- Better current sharing when paralleling
- Superior power handling capability
- Enhanced robustness
- Optimized PCB area utilization
- Improved system reliability
Support