IPTC030N12NM3
Überblick
OptiMOS™ power MOSFET 120 V in TOLT package
Infineon’s OptiMOS™ power MOSFET 120 V technology meets TO-Leaded top-side cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS™ technology allows for high power density designs.
The TOLT package in addition to its high-current low-profile features, compared typically to the TOLL family, offers the advantage of top-side cooling making it an ideal choice for applications seeking high thermal performance.
Zusammenfassung der Merkmale
- Top-side cooling
- Low RDS (on)
- High current rating of >300 A
- 175°C operating temperature
- Sn-free exposed pad
Vorteile
- High power density
- Improved thermal management
- High system efficiency and less paralleling required
Potentielle Zielanwendungen
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