IPTC017N12NM6
Überblick
OptiMOS™ 6 power MOSFET normal level 120 V in TOLT package
This is a normal level 120 V MOSFET in TO-Leaded top-side cooling (TOLT) packaging with 1.7 mOhm on-resistance. IPTC017N12NM6 is part of Infineon’s OptiMOS™ 6 power MOSFET family.
Zusammenfassung der Merkmale
Compared to OptiMOS™ 3, the technology features:
- up to 58% better RDS(on)
- up to 66% better FOMg
- up to 90% better Qrr
- up to 35% better FOMoss
Vorteile
- Very low on-resistance
- Very low reverse recovery charge
- Excellent gate charge x RDS(on)
- High avalanche energy rating
- 175°C junction temperature rating
- Pb-free plating
- RoHS compliant
- Halogen-free
- MSL1 classified
Potentielle Zielanwendungen
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