IPP019N08NF2S
Überblick
StrongIRFET™ 2 single N-channel power MOSFET 80 V in TO-220 package
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 1.9 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Compared to the previous technology the IPP019N08NF2S achieves 40 percent lower RDS(on) and 40 percent Qg improvement.
Zusammenfassung der Merkmale
- Broad availability from distribution partners
- Excellent price/performance ratio
- Ideal for high- and low-switching frequency
- Industry standard footprint through-hole package
- High current rating
- Capable of wave-soldering
Vorteile
- Multi-vendor compatibility
- Right-fit products
- Supports a wide variety of applications
- Standard pinout allows for drop-in replacement
- Increased current carrying capability
- Ease of manufacturing
Potentielle Zielanwendungen
Trainings
Qualität
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