IPM018N10NM5LF2
Überblick
OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1.8 mΩ, 176 A in 8 mm x 8 mm footprint
IPM018N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the new 8x8 mTOLG, offering the industry’s lowest RDS(on) and wide SOA at 25˚C. This is a JEDEC listed package, compatible with other 8x8 mm2 gullwing package MOSFETs, i.e. LFPAK88 type.
The combination of the OptiMOS™ 5 Linear FET 2 technology and the mTOLG package, is designed to provide highest power density for inrush current protection applications such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).
Zusammenfassung der Merkmale
- 8 mm x 8 mm footprint
- Wide safe operating area (SOA)
- Ultra low On-Resistance
- Lower leakage current
- Optimized transfer characteristic
Vorteile
- Highest power density in 8x8 mm2
- Low conduction losses
- Rugged linear mode operation
- Better current sharing
- Improved gate driver compatibility
Support
