IPF031N13NM6
Überblick
OptiMOS™ 6 power MOSFET 135 V Normal Level in D²PAK 7-pin
This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D²PAK 7-pin OptiMOS™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread compared to the OptiMOS™ 5 150 V.
This results in lower conduction losses and increased output power. The low VGS(th) spread leads to improved dynamic current sharing, that enables you to reduce the number of MOSFETs and lowers the system costs.
Zusammenfassung der Merkmale
Compared to OptiMOS™ 5 150 V
- Up to 53% lower ON-state-resistance
- Up to 38% lower gate threshold voltage spread
- Up to 70% reduction of reverse recovery charge (Qrr)
- Up to 45% lower peak reverse recovery current
(-Irrm)
Vorteile
- System cost reduction
- Lower conduction losses and increased output power
- Lower EMI
- Less paralleling required
- Higher power density designs
Potentielle Zielanwendungen
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