IPQC60R017S7
Überblick
Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device
The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs in a compact SMD package. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and relays, PLCs, battery protection, and active bridge rectification in high-power power supplies. The bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device.
Zusammenfassung der Merkmale
- Compact bottom-side-cooled QDPAK package
- Optimized for conduction performance
- Improved thermal resistance
- High pulse current capability
- Kelvin-source pin improves switching performance at high current
Vorteile
- Minimizes conduction losses
- Increases energy efficiency
- More compact and easier designs
- Eliminates or reduces heat sinks in solid-state design
- Lower TCO cost or BOM cost
Potentielle Zielanwendungen
- SMPS
- Solar energy systems
- Battery and equipment protection
- Solid state relays (SSR) and solid state circuit breakers (SSCB)
- Indoor commercial lighting control
- UPS
- Low speed electric vehicles (LSEV)
- Programmable logic controllers (PLC)
- Room air conditioning
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