IPP60R060P7

Überblick

Optimized power MOSFETs merging high energy efficiency with ease-of-use

The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R _onxA and the inherently low gate charge (Q _G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Zusammenfassung der Merkmale

Efficiency

600V P7 enables excellent FOM R _DS(on)xE _oss andR _DS(on)xQ _G

Ease-of-use

ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R _G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available

Vorteile

Efficiency

Excellent FOMs R _DS(on)xQ _G/R _DS(on)xE _oss enable higher efficiency

Ease-of-use

Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated R _G reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications

Potentielle Zielanwendungen