IPDQ60R007CM8

Überblick

IPDQ60R007CM8 600 V CoolMOS™ 8 power transistor

The 600 V CoolMOS™ 8 SJ MOSFETs series is the successor to the 600 V CoolMOS™ 7 MOSFET family including P7, S7, CFD7, C7 (G7) and PFD7.

It comes with reduced gate charge (Qg) of 20% over CFD7, reduction in turn-off losses (Eoss) is further improved by 12% over CFD7, reverse recovery charge (Qrr) is 3% lower compared to the CFD7, as well as the lowest reverse recovery time (trr) in the market.

Zusammenfassung der Merkmale

  • 7 mΩ device
  • Best-in-class RDS(on)*A
  • Significant reduction of losses
  • Excellent commutation ruggedness
  • Integrated fast body diode
  • .XT interconnection
  • ESD protection
  • Top side cooling Q-DPAK package
  • 2000 cycle TCoB

Vorteile

  • Increased power density
  • Ease of use and fast design-in
  • Low ringing tendency
  • Simplified thermal management
  • Simplified portfolio
  • SMT compatible
  • Reduced assembly cost
  • Reduced stray inductance
  • Space reduction

Potentielle Zielanwendungen

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