IPAN60R180P7S
Überblick
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Zusammenfassung der Merkmale
Efficiency
- 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
Ease-of-use
- ESD ruggedness of ≥ 2kV (HBM class 2)
- Integrated gate resistor RG
- Rugged body diode
- Wide portfolio in through hole and surface mount packages
- Both standard grade and industrial grade parts are available
Vorteile
Efficiency
- Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use
- Ease-of-use in manufacturing environments by stopping ESD failures occurring
- Integrated RG reduces MOSFET oscillation sensitivity
- MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
- Excellent ruggedness during hard commutation of the body diode seen in LLC topology
- Suitable for a wide variety of end applications and output powers
- Parts available suitable for consumer and industrial applications
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